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Universal Excess Noise in Resonant Tunneling via Strongly Localized States
Journal article   Peer reviewed

Universal Excess Noise in Resonant Tunneling via Strongly Localized States

Yuli V. Nazarov and Jeroen Struben
Physical Review B, Vol.53(23), pp.15466-15468
15/06/1996

Abstract

We show that in disordered resonant tunneling conductors the excess current noise is suppressed by a factor of 3/4 in comparison with its Poisson value provided the electrons tunnel via strongly localized states. Thus we reveal a class of systems exhibiting universality of its shot-noise properties. We discuss recent experiments.

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Citation topics
5 Physics
5.33 Semiconductor Physics
5.33.329 Quantum Hall Effect
Web of Science research areas
Materials Science, Multidisciplinary
Physics, Applied
Physics, Condensed Matter
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